Film growth method by means of ion beam sputtering

Yamaguchi, Kenji

Shirisaidokei Handotai No Kagaku To Gijutsu, p.113 - 121, 2014/09

This article describes first the basic aspects of sputtering phenomena based on ion beam - solid interactions, followed by introduction of ion beam sputter deposition (IBSD) method for thin film fabrication. The article further introduces the experimental apparatus for IBSD application, equipped with an ion beam irradiation system for sputter-etching of the substrate surface. It is shown that this method is suitable for fabrication of semiconducting iron silicide film on Si substrate. The experimental results revealed that the obtained thin film is highly-oriented and continuous, forming atomically flat interface between film and the substrate.